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| Super323TM SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES ZUMT617 * * * * * 500mW POWER DISSIPATION IC CONT 1.5A 5A Peak Pulse Current Excellent HFE Characteristics Up To 5A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * DC-DC converter boost functions * Motor drive functions DEVICE TYPE ZUMT617 COMPLEMENT ZUMT717 PARTMARKING T61 RCE(sat) 135m at 1.5A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb =25C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE 15 15 5 5 1.5 200 385 500 -55 to +150 UNIT V V V A A mA mW Operating and Storage Temperature Tj:Tstg Range C Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT617 ELECTRICAL CHARACTERISTICS (at T amb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 16.5 40 75 150 205 930 865 200 300 250 200 75 30 420 450 390 300 150 75 180 15 50 250 MHz pF ns ns MIN. 15 15 5 10 10 10 20 55 100 200 245 1100 1100 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC= 100A IC= 10mA* IE= 100A VCB= 10V VEB= 4V VCES= 10V IC= 100mA, IB=10mA* IC= 250mA, IB= 10mA* IC= 500mA, IB=10mA* IC= 1A, IB=10mA* IC= 1.5A, IB=20mA* IC= 1.5A, IB=20mA* IC= 1.5A, VCE= 2V* IC= 10mA, VCE= 2V* IC= 100mA, VCE= 2V* IC= 500mA, VCE=2V* IC= 1A, VCE=2 V* IC= 3A, VCE=2V* IC=5A, VCE= 2V* IC= 50mA, VCE= 10V f= 100MHz VCB= 10V, f=1MHz VCC= 10V, IC= 1A IB1=IB2=100mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo t(on) t(off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZUMT617 TYPICAL CHARACTERISTICS 0.4 +25C 0.4 IC/IB=50 0.3 0.3 VCE(sat) - (V) VCE(sat) - (V) IC/IB=10 IC/IB=50 IC/IB=100 0.2 0.2 -55C +25C +100C +150C 0.1 0.1 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 800 VCE=2V IC/IB=50 1.0 hFE - Typical Gain 600 VBE(sat) - (V) +100C 0.75 400 +25C 0.5 -55C +25C +100C +150C 200 -55C 0.25 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.0 0.8 10 IC - Collector Current (A) VBE(on) - (V) 1 DC 1s 100ms 10ms 1ms 100us 0.6 0.4 0.2 0 1m 10m 100m 1 10 -55C +25C +100C +150C 100m 10m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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